TLC3578IDW DataSheet
DATASHEET
TLC3578IDW Description
The HYB 39S256400/800/160T are four bank Synchronous DRAMs organized as 4 banks 16MBit x4, 4 banks 8MBit x8 and 4 banks 4Mbit x16 respectively. These synchro- nous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon advanced 256 MBit DRAM process technology.
TLC3578IDW Features
Hynix HYMD512G726(L)8-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Mem- ory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD512G726(L)8-K/H/L series consists of eighteen 64Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD512G726(L)8-K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of indus- try standard. It is suitable for easy interchange and addition.
TLC3578IDW Applicatioins
Technical/Catalog InformationTLC3578IDWVendorTexas InstrumentsCategoryIntegrated Circuits (ICs) Number of Bits