STW10NK80Z DataSheet
DATASHEET
STW10NK80Z Description
Caution: This component is susceptible to damage from electrostatic discharge. Normal static prevention procedures should be used in handling. Notes: (1) Derate linearly above 70o C free-air temperature at a rate of 0.45 mA/o C. (2) Derate linearly above 70o C free-air temperature at a rate of 0.9 mA/o C. (3) Derate linearly above 70o C free-air temperature at a rate of 0.8 mW/o C. (4) Derate linearly above 70o C free-air temperature at a rate of 1.8 mW/o C. (5) CMH is the maximum allowable dV/dt on the leading edge of a common mode pulse to assure that the output will not switch from high to low. (6) CML is the maximum negative dV/dt allowable on the trailing edge of a common mode pulse to assure that the output will not switch from low to high. (7) Test conditions represents 1 TTL unit load with 5.6 kΩ pull-up resistor. (8) Test conditions represents 1 LSTTL unit load with a 6.1 kΩ pull-up resistor. (9) Device considered a two-terminal device: pins 2 and 3 shorted together and pins 5, 6, 7 and 8 shorted together.
STW10NK80Z Features
The STW10NK80Z is a single-chip modem employing Gaussian Minimum Shift Keying (GMSK) modulation. Having a pin selectable BT of 0.3 or 0.5, the STW10NK80Z may be employed at data rates of between 4,000bits/s and 19,200bits/s; for use in FM radio-data links and data communication systems conforming to DOC and FCC spectrum limitations for 12.5kHz and 8,000 baud at a BT of 0.3, and 12.5, 25.0, and 50.kHz channel spacing and data rates of 4800, 9600 and 19,200 baud respectively at a BT of 0.5.
STW10NK80Z Applicatioins
Technical/Catalog InformationSTW10NK80ZVendorSTMicroelectronicsCategoryDiscrete Semiconductor Products Mounting Type
Relate Parts
Part Number
Quantity
Manufacturer
Date Code
Description
Pricing
9427
08+
S3901/S3904 series do not require any DC voltage
15092
11+
The SAB 80C515/80C535 is a stand-alone, high-perfo
9113
11+
Vth can be expressed as voltage between gat
12954
11+
The HYB 39S256400/800/160T are four bank Synchron
3779
All channels are clamped during sync to establish
10528
The constant-frequency, current-mode PWM architect
5839
1. Stresses greater than those listed under "
13037
Electrostatic discharge can cause damage ranging
11058
• PNP Silicon Epitaxial Planar Transistors